Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)

Ammonium sulfide ((NH(4))(2)S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH(4))(2)S....

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Jung Sub, Ahn, Tae Young, Kim, Daewon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926807/
https://www.ncbi.nlm.nih.gov/pubmed/31783497
http://dx.doi.org/10.3390/ma12233917
Descripción
Sumario:Ammonium sulfide ((NH(4))(2)S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH(4))(2)S. It was found that a 10% (NH(4))(2)S treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the depletion or accumulation mode. After the InP substrate was passivated by the optimized (NH(4))(2)S, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density (D(it)) proved that the growth of native oxide was suppressed.

Ejemplares similares