Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)

Ammonium sulfide ((NH(4))(2)S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH(4))(2)S....

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Detalles Bibliográficos
Autores principales: Lee, Jung Sub, Ahn, Tae Young, Kim, Daewon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926807/
https://www.ncbi.nlm.nih.gov/pubmed/31783497
http://dx.doi.org/10.3390/ma12233917
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author Lee, Jung Sub
Ahn, Tae Young
Kim, Daewon
author_facet Lee, Jung Sub
Ahn, Tae Young
Kim, Daewon
author_sort Lee, Jung Sub
collection PubMed
description Ammonium sulfide ((NH(4))(2)S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH(4))(2)S. It was found that a 10% (NH(4))(2)S treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the depletion or accumulation mode. After the InP substrate was passivated by the optimized (NH(4))(2)S, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density (D(it)) proved that the growth of native oxide was suppressed.
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spelling pubmed-69268072019-12-24 Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3) Lee, Jung Sub Ahn, Tae Young Kim, Daewon Materials (Basel) Communication Ammonium sulfide ((NH(4))(2)S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH(4))(2)S. It was found that a 10% (NH(4))(2)S treatment for 10 min exhibits the best electrical properties in terms of hysteresis and frequency dispersions in the depletion or accumulation mode. After the InP substrate was passivated by the optimized (NH(4))(2)S, the results of x-ray photoelectron spectroscopy (XPS) and the extracted interface trap density (D(it)) proved that the growth of native oxide was suppressed. MDPI 2019-11-27 /pmc/articles/PMC6926807/ /pubmed/31783497 http://dx.doi.org/10.3390/ma12233917 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Lee, Jung Sub
Ahn, Tae Young
Kim, Daewon
Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)
title Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)
title_full Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)
title_fullStr Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)
title_full_unstemmed Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)
title_short Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)
title_sort facile process for surface passivation using (nh(4))(2)s for the inp mos capacitor with ald al(2)o(3)
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926807/
https://www.ncbi.nlm.nih.gov/pubmed/31783497
http://dx.doi.org/10.3390/ma12233917
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