Cargando…

Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)

Ammonium sulfide ((NH(4))(2)S) was used for the passivation of an InP (100) substrate and its conditions were optimized. The capacitance–voltage (C–V) characteristics of InP metal-oxide-semiconductor (MOS) capacitors were analyzed by changing the concentration of and treatment time with (NH(4))(2)S....

Descripción completa

Detalles Bibliográficos
Autores principales:	Lee, Jung Sub, Ahn, Tae Young, Kim, Daewon
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Communication
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926807/ https://www.ncbi.nlm.nih.gov/pubmed/31783497 http://dx.doi.org/10.3390/ma12233917

Ejemplares similares

Interface Optimization and Performance Enhancement of Er(2)O(3)-Based MOS Devices by ALD-Derived Al(2)O(3) Passivation Layers and Annealing Treatment
por: Wu, Qiuju, et al.
Publicado: (2023)

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al(2)O(3) with PO(x) Interlayer
por: Black, L. E., et al.
Publicado: (2017)

Surface Chemistry Dictates the Enhancement of Luminescence and Stability of InP QDs upon c-ALD ZnO Hybrid Shell Growth
por: Segura Lecina, Ona, et al.
Publicado: (2023)

Data of ALD Al(2)O(3) rear surface passivation, Al(2)O(3) PERC cell performance, and cell efficiency loss mechanisms of Al(2)O(3) PERC cell
por: Huang, Haibing, et al.
Publicado: (2016)

Immobilization of enzyme and antibody on ALD-HfO(2)-EIS structure by NH(3 )plasma treatment
por: Wang, I-Shun, et al.
Publicado: (2012)

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS(2) and HfO(2) High-k Dielectric
por: Xia, Pengkun, et al.
Publicado: (2017)

Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
por: Higuera-Rodriguez, A., et al.
Publicado: (2017)

Surface passivation extends single and biexciton lifetimes of InP quantum dots
por: Yang, Wenxing, et al.
Publicado: (2020)

Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO(2) ALD Properties for Improved Electrical and Reliability Parameters
por: Falidas, Konstantinos Efstathios, et al.
Publicado: (2022)

The planar anodic Al(2)O(3)-ZrO(2) nanocomposite capacitor dielectrics for advanced passive device integration
por: Kamnev, Kirill, et al.
Publicado: (2023)

Characterization of Electrical Traps Formed in Al(2)O(3) under Various ALD Conditions
por: Rahman, Md. Mamunur, et al.
Publicado: (2020)

Electrocatalytic Performance of Titania Nanotube Arrays Coated with MoS(2) by ALD toward the Hydrogen Evolution Reaction
por: Cao, Yuanyuan, et al.
Publicado: (2019)

ALD-grown two-dimensional TiS(x) metal contacts for MoS(2) field-effect transistors
por: Mahlouji, Reyhaneh, et al.
Publicado: (2023)

MoS(2)‐Based Catalysts for N(2) Electroreduction to NH(3) – An Overview of MoS(2) Optimization Strategies
por: Tian, Liang, et al.
Publicado: (2021)

Bayesian Machine Learning for Efficient Minimization of Defects in ALD Passivation Layers
por: Dogan, Gül, et al.
Publicado: (2021)

Measurements of neutron-induced effects in silicon detectors and MOS capacitors
por: Glaser, M, et al.
Publicado: (1991)

On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
por: Mahlouji, Reyhaneh, et al.
Publicado: (2021)

Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al(2)O(3) on an n-Type Silicon Substrate
por: Bhattacharjee, Atish, et al.
Publicado: (2021)

InP and AlInP(001)(2 × 4) Surface Oxidation from Density Functional Theory
por: Ruiz Alvarado, Isaac Azahel, et al.
Publicado: (2021)

ALD Al(2)O(3)-Coated TiO(2) Nanotube Layers as Anodes for Lithium-Ion Batteries
por: Sopha, Hanna, et al.
Publicado: (2017)

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO(2)/Al(2)O(3) Nanolaminated Dielectrics
por: Spassov, Dencho, et al.
Publicado: (2021)

Effect of Al(2)O(3) Passive Layer on Stability and Doping of MoS(2) Field-Effect Transistor (FET) Biosensors
por: Pham, Tung, et al.
Publicado: (2021)

ALD-induced TiO(2)/Ag nanofilm for rapid surface photodynamic ion sterilization
por: Cai, Peng-Fei, et al.
Publicado: (2022)

Interface Optimization and Transport Modulation of Sm(2)O(3)/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer
por: Lu, Jinyu, et al.
Publicado: (2021)

Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers
por: Zheng, Meijuan, et al.
Publicado: (2017)

Highly Selective NH(3) Sensor Based on MoS(2)/WS(2) Heterojunction
por: Zhang, Min, et al.
Publicado: (2023)

Deep Blue and Highly Emissive ZnS-Passivated InP QDs: Facile Synthesis, Characterization, and Deciphering of Their Ultrafast-to-Slow Photodynamics
por: Rakshit, Soumyadipta, et al.
Publicado: (2023)

ALD Deposited ZnO:Al Films on Mica for Flexible PDLC Devices
por: Dimitrov, Dimitre Z., et al.
Publicado: (2021)

Transparent and flexible capacitors based on nanolaminate Al(2)O(3)/TiO(2)/Al(2)O(3)
por: Zhang, Guozhen, et al.
Publicado: (2015)

Engineering MoS(x)/Ti/InP Hybrid Photocathode for Improved Solar Hydrogen Production
por: Li, Qiang, et al.
Publicado: (2016)

Influence of Conditioning Temperature on Defects in the Double Al(2)O(3)/ZnO Layer Deposited by the ALD Method
por: Gawlińska-Nęcek, Katarzyna, et al.
Publicado: (2021)

Bifunctional Metal Oleate as an Alternative Method to Remove Surface Oxide and Passivate Surface Defects of Aminophosphine-Based InP Quantum Dots
por: Chen, Pin-Ru, et al.
Publicado: (2022)

MOS switched-capacitor and continuous-time integrated circuits and systems: analysis and design
por: Unbehauen, Rolf, et al.
Publicado: (1989)

Realization of fractional-order capacitor based on passive symmetric network
por: Semary, Mourad S., et al.
Publicado: (2019)

The Effect of Post Deposition Treatment on Properties of ALD Al-Doped ZnO Films
por: Petrova, Dimitrina, et al.
Publicado: (2023)

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al(2)O(3) Gate Dielectrics
por: Yoshino, Michitaka, et al.
Publicado: (2019)

Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO(2)/Al(2)O(3 )gate stack: study of Ge auto-doping and p-type Zn doping
por: Dalapati, Goutam Kumar, et al.
Publicado: (2012)

The Study of Electrical Properties for Multilayer La(2)O(3)/Al(2)O(3) Dielectric Stacks and LaAlO(3) Dielectric Film Deposited by ALD
por: Feng, Xing-Yao, et al.
Publicado: (2017)

Budker INP in the LHC Machine (2)
Publicado: (2001)

Chemical synthesis and optical, structural, and surface characterization of InP-In(2)O(3) quantum dots
por: Granada-Ramirez, D.A., et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_l70rgsdjk7qe2td703fk1b3nts