Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO(2) Gate Insulator

The influence of oxygen–plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO(2) gate insulator was investigated. Oxygen–plasma treatment was performed on in situ SiN, before SiO(2) gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD)....

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Detalles Bibliográficos
Autores principales: Cho, Geunho, Cha, Ho-young, Kim, Hyungtak
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926897/
https://www.ncbi.nlm.nih.gov/pubmed/31795462
http://dx.doi.org/10.3390/ma12233968

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6926897/
https://www.ncbi.nlm.nih.gov/pubmed/31795462
http://dx.doi.org/10.3390/ma12233968

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