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Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure
Self-heating effect is a major limitation in achieving the full performance potential of high power GaN power devices. In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6928204/ https://www.ncbi.nlm.nih.gov/pubmed/31873168 http://dx.doi.org/10.1038/s41598-019-56292-3 |