Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

A low voltage (−20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 10(14) /cm(3)) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky...

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Detalles Bibliográficos
Autores principales: Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P., Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6928794/
https://www.ncbi.nlm.nih.gov/pubmed/31766532
http://dx.doi.org/10.3390/s19235107

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6928794/
https://www.ncbi.nlm.nih.gov/pubmed/31766532
http://dx.doi.org/10.3390/s19235107

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