Cargando…
Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency
A low voltage (−20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 10(14) /cm(3)) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky...
Autores principales: | Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P., Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6928794/ https://www.ncbi.nlm.nih.gov/pubmed/31766532 http://dx.doi.org/10.3390/s19235107 |
Ejemplares similares
-
Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
por: Sandupatla, Abhinay, et al.
Publicado: (2020) -
Nanoscale High-Tc YBCO/GaN Super-Schottky Diode
por: Panna, Dmitry, et al.
Publicado: (2018) -
Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
por: Zhang, Haitao, et al.
Publicado: (2021) -
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
por: Besendörfer, Sven, et al.
Publicado: (2020) -
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
por: Gu, Hong, et al.
Publicado: (2019)