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GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes
InPBi exhibits broad and strong photoluminescence at room temperature, and is a potential candidate for fabricating super-luminescence diodes applied in optical coherence tomography. In this paper, the strained InPBi quantum dot (QD) embedded in the AlGaAs barrier on a GaAs platform is proposed to e...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6929012/ https://www.ncbi.nlm.nih.gov/pubmed/31795220 http://dx.doi.org/10.3390/ijms20236001 |