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GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes

InPBi exhibits broad and strong photoluminescence at room temperature, and is a potential candidate for fabricating super-luminescence diodes applied in optical coherence tomography. In this paper, the strained InPBi quantum dot (QD) embedded in the AlGaAs barrier on a GaAs platform is proposed to e...

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Detalles Bibliográficos
Autores principales:	Zhang, Liyao, Song, Yuxin, Gong, Qian
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6929012/ https://www.ncbi.nlm.nih.gov/pubmed/31795220 http://dx.doi.org/10.3390/ijms20236001

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