Low Dielectric Poly(imide siloxane) Films Enabled by a Well-Defined Disiloxane-Linked Alkyl Diamine

[Image: see text] This paper presents an efficient pathway to achieve the dielectric constant as low as 2.48 @ 25 °C, 1 MHz for nonporous poly(imide siloxane) films with mechanical and thermal robustness. A symmetric disiloxane-linked alkyl diamine, bis(aminopropyl)tetramethyldisiloxane (BATMS) with...

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Detalles Bibliográficos
Autores principales: Qi, Haixia, Wang, Xiulong, Zhu, Tangsong, Li, Juan, Xiong, Lei, Liu, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6933767/
https://www.ncbi.nlm.nih.gov/pubmed/31891096
http://dx.doi.org/10.1021/acsomega.9b03302

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6933767/
https://www.ncbi.nlm.nih.gov/pubmed/31891096
http://dx.doi.org/10.1021/acsomega.9b03302

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