Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements

Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization technique to decouple t...

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Detalles Bibliográficos
Autores principales: Rashidi, Arman, Monavarian, Morteza, Aragon, Andrew, Feezell, Daniel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934866/
https://www.ncbi.nlm.nih.gov/pubmed/31882667
http://dx.doi.org/10.1038/s41598-019-56390-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934866/
https://www.ncbi.nlm.nih.gov/pubmed/31882667
http://dx.doi.org/10.1038/s41598-019-56390-2

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