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Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization technique to decouple t...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934866/ https://www.ncbi.nlm.nih.gov/pubmed/31882667 http://dx.doi.org/10.1038/s41598-019-56390-2 |
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author | Rashidi, Arman Monavarian, Morteza Aragon, Andrew Feezell, Daniel |
author_facet | Rashidi, Arman Monavarian, Morteza Aragon, Andrew Feezell, Daniel |
author_sort | Rashidi, Arman |
collection | PubMed |
description | Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization technique to decouple these processes under electrical injection and determine their individual roles in droop phenomena is lacking. In this work, we investigate thermal and efficiency droop in electrically injected single-quantum-well InGaN/GaN LEDs by decoupling the inherent radiative efficiency, injection efficiency, carrier transport, and thermal effects using a comprehensive rate equation approach and a temperature-dependent pulsed-RF measurement technique. Determination of the inherent recombination rates in the quantum well confirms efficiency droop at high current densities is caused by a combination of strong non-radiative recombination (with temperature dependence consistent with indirect Auger) and saturation of the radiative rate. The overall reduction of efficiency at elevated temperatures (thermal droop) results from carriers shifting from the radiative process to the non-radiative processes. The rate equation approach and temperature-dependent pulsed-RF measurement technique unambiguously gives access to the true recombination dynamics in the QW and is a useful methodology to study efficiency issues in III-nitride LEDs. |
format | Online Article Text |
id | pubmed-6934866 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-69348662019-12-31 Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements Rashidi, Arman Monavarian, Morteza Aragon, Andrew Feezell, Daniel Sci Rep Article Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization technique to decouple these processes under electrical injection and determine their individual roles in droop phenomena is lacking. In this work, we investigate thermal and efficiency droop in electrically injected single-quantum-well InGaN/GaN LEDs by decoupling the inherent radiative efficiency, injection efficiency, carrier transport, and thermal effects using a comprehensive rate equation approach and a temperature-dependent pulsed-RF measurement technique. Determination of the inherent recombination rates in the quantum well confirms efficiency droop at high current densities is caused by a combination of strong non-radiative recombination (with temperature dependence consistent with indirect Auger) and saturation of the radiative rate. The overall reduction of efficiency at elevated temperatures (thermal droop) results from carriers shifting from the radiative process to the non-radiative processes. The rate equation approach and temperature-dependent pulsed-RF measurement technique unambiguously gives access to the true recombination dynamics in the QW and is a useful methodology to study efficiency issues in III-nitride LEDs. Nature Publishing Group UK 2019-12-27 /pmc/articles/PMC6934866/ /pubmed/31882667 http://dx.doi.org/10.1038/s41598-019-56390-2 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Rashidi, Arman Monavarian, Morteza Aragon, Andrew Feezell, Daniel Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements |
title | Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements |
title_full | Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements |
title_fullStr | Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements |
title_full_unstemmed | Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements |
title_short | Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements |
title_sort | thermal and efficiency droop in ingan/gan light-emitting diodes: decoupling multiphysics effects using temperature-dependent rf measurements |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934866/ https://www.ncbi.nlm.nih.gov/pubmed/31882667 http://dx.doi.org/10.1038/s41598-019-56390-2 |
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