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Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements

Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization technique to decouple t...

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Autores principales: Rashidi, Arman, Monavarian, Morteza, Aragon, Andrew, Feezell, Daniel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934866/
https://www.ncbi.nlm.nih.gov/pubmed/31882667
http://dx.doi.org/10.1038/s41598-019-56390-2
_version_ 1783483483530723328
author Rashidi, Arman
Monavarian, Morteza
Aragon, Andrew
Feezell, Daniel
author_facet Rashidi, Arman
Monavarian, Morteza
Aragon, Andrew
Feezell, Daniel
author_sort Rashidi, Arman
collection PubMed
description Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization technique to decouple these processes under electrical injection and determine their individual roles in droop phenomena is lacking. In this work, we investigate thermal and efficiency droop in electrically injected single-quantum-well InGaN/GaN LEDs by decoupling the inherent radiative efficiency, injection efficiency, carrier transport, and thermal effects using a comprehensive rate equation approach and a temperature-dependent pulsed-RF measurement technique. Determination of the inherent recombination rates in the quantum well confirms efficiency droop at high current densities is caused by a combination of strong non-radiative recombination (with temperature dependence consistent with indirect Auger) and saturation of the radiative rate. The overall reduction of efficiency at elevated temperatures (thermal droop) results from carriers shifting from the radiative process to the non-radiative processes. The rate equation approach and temperature-dependent pulsed-RF measurement technique unambiguously gives access to the true recombination dynamics in the QW and is a useful methodology to study efficiency issues in III-nitride LEDs.
format Online
Article
Text
id pubmed-6934866
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-69348662019-12-31 Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements Rashidi, Arman Monavarian, Morteza Aragon, Andrew Feezell, Daniel Sci Rep Article Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization technique to decouple these processes under electrical injection and determine their individual roles in droop phenomena is lacking. In this work, we investigate thermal and efficiency droop in electrically injected single-quantum-well InGaN/GaN LEDs by decoupling the inherent radiative efficiency, injection efficiency, carrier transport, and thermal effects using a comprehensive rate equation approach and a temperature-dependent pulsed-RF measurement technique. Determination of the inherent recombination rates in the quantum well confirms efficiency droop at high current densities is caused by a combination of strong non-radiative recombination (with temperature dependence consistent with indirect Auger) and saturation of the radiative rate. The overall reduction of efficiency at elevated temperatures (thermal droop) results from carriers shifting from the radiative process to the non-radiative processes. The rate equation approach and temperature-dependent pulsed-RF measurement technique unambiguously gives access to the true recombination dynamics in the QW and is a useful methodology to study efficiency issues in III-nitride LEDs. Nature Publishing Group UK 2019-12-27 /pmc/articles/PMC6934866/ /pubmed/31882667 http://dx.doi.org/10.1038/s41598-019-56390-2 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Rashidi, Arman
Monavarian, Morteza
Aragon, Andrew
Feezell, Daniel
Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
title Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
title_full Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
title_fullStr Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
title_full_unstemmed Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
title_short Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
title_sort thermal and efficiency droop in ingan/gan light-emitting diodes: decoupling multiphysics effects using temperature-dependent rf measurements
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934866/
https://www.ncbi.nlm.nih.gov/pubmed/31882667
http://dx.doi.org/10.1038/s41598-019-56390-2
work_keys_str_mv AT rashidiarman thermalandefficiencydroopininganganlightemittingdiodesdecouplingmultiphysicseffectsusingtemperaturedependentrfmeasurements
AT monavarianmorteza thermalandefficiencydroopininganganlightemittingdiodesdecouplingmultiphysicseffectsusingtemperaturedependentrfmeasurements
AT aragonandrew thermalandefficiencydroopininganganlightemittingdiodesdecouplingmultiphysicseffectsusingtemperaturedependentrfmeasurements
AT feezelldaniel thermalandefficiencydroopininganganlightemittingdiodesdecouplingmultiphysicseffectsusingtemperaturedependentrfmeasurements