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Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements

Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization technique to decouple t...

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Detalles Bibliográficos
Autores principales:	Rashidi, Arman, Monavarian, Morteza, Aragon, Andrew, Feezell, Daniel
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934866/ https://www.ncbi.nlm.nih.gov/pubmed/31882667 http://dx.doi.org/10.1038/s41598-019-56390-2

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