Amorphous Ta(x)Mn(y)O(z) Layer as a Diffusion Barrier for Advanced Copper Interconnects

An amorphous Ta(x)Mn(y)O(z) layer with 1.0 nm thickness was studied as an alternative Cu diffusion barrier for advanced interconnect. The thermal and electrical stabilities of the 1.0-nm-thick Ta(x)Mn(y)O(z) barrier were evaluated by transmission electron microscopy (TEM) and current density–electri...

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Detalles Bibliográficos
Autores principales: An, Byeong-Seon, Kwon, Yena, Oh, Jin-Su, Lee, Miji, Pae, Sangwoo, Yang, Cheol-Woong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934869/
https://www.ncbi.nlm.nih.gov/pubmed/31882921
http://dx.doi.org/10.1038/s41598-019-56796-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934869/
https://www.ncbi.nlm.nih.gov/pubmed/31882921
http://dx.doi.org/10.1038/s41598-019-56796-y

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