Cargando…
Amorphous Ta(x)Mn(y)O(z) Layer as a Diffusion Barrier for Advanced Copper Interconnects
An amorphous Ta(x)Mn(y)O(z) layer with 1.0 nm thickness was studied as an alternative Cu diffusion barrier for advanced interconnect. The thermal and electrical stabilities of the 1.0-nm-thick Ta(x)Mn(y)O(z) barrier were evaluated by transmission electron microscopy (TEM) and current density–electri...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934869/ https://www.ncbi.nlm.nih.gov/pubmed/31882921 http://dx.doi.org/10.1038/s41598-019-56796-y |