Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

Ferroelectric tunneling junctions (FTJs) with tunable tunneling electroresistance (TER) are promising for many emerging applications, including non-volatile memories and neurosynaptic computing. One of the key challenges in FTJs is the balance between the polarization value and the tunneling current...

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Detalles Bibliográficos
Autores principales: Ryu, Hojoon, Wu, Haonan, Rao, Fubo, Zhu, Wenjuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6938512/
https://www.ncbi.nlm.nih.gov/pubmed/31892720
http://dx.doi.org/10.1038/s41598-019-56816-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6938512/
https://www.ncbi.nlm.nih.gov/pubmed/31892720
http://dx.doi.org/10.1038/s41598-019-56816-x

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