In Situ Observation of Crystalline Silicon Growth from SiO(2) at Atomic Scale

The growth of crystalline Si (c-Si) via direct electron beam writing shows promise for fabricating Si nanomaterials due to its ultrahigh resolution. However, to increase the writing speed is a major obstacle, due to the lack of systematic experimental explorations of the growth process and mechanism...

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Detalles Bibliográficos
Autores principales: Yu, Kaihao, Xu, Tao, Wu, Xing, Wang, Wen, Zhang, Hui, Zhang, Qiubo, Tang, Luping, Sun, Litao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: AAAS 2019
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6944520/
https://www.ncbi.nlm.nih.gov/pubmed/31912032
http://dx.doi.org/10.34133/2019/3289247

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6944520/
https://www.ncbi.nlm.nih.gov/pubmed/31912032
http://dx.doi.org/10.34133/2019/3289247

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