Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance

In this paper, a 13.4 kV/55 A 4H-silicon carbide (SiC) PiN diode with a better trade-off between blocking voltage, differential on-resistance, and technological process complexity has been successfully developed. A multiple zone gradient modulation field limiting ring (MGM-FLR) for extremely high-po...

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Detalles Bibliográficos
Autores principales: Liu, Yuewei, Yang, Ruixia, Wang, Yongwei, Zhang, Zhiguo, Deng, Xiaochuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947216/
https://www.ncbi.nlm.nih.gov/pubmed/31842506
http://dx.doi.org/10.3390/ma12244186

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947216/
https://www.ncbi.nlm.nih.gov/pubmed/31842506
http://dx.doi.org/10.3390/ma12244186

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