Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers

In this work, a sputtered AlN template is employed to grow high-quality AlGaN/GaN heterostructures, and the effects of AlN nucleation layer growth conditions on the structural and electrical properties of heterostructures are investigated in detail. The optimal growth condition is obtained with comp...

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Detalles Bibliográficos
Autores principales: Liu, Chuan-Yang, Zhang, Ya-Chao, Xu, Sheng-Rui, Jiang, Li, Zhang, Jin-Cheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947395/
https://www.ncbi.nlm.nih.gov/pubmed/31817364
http://dx.doi.org/10.3390/ma12244050

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947395/
https://www.ncbi.nlm.nih.gov/pubmed/31817364
http://dx.doi.org/10.3390/ma12244050

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