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Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al(0.7)Ga(0.3)N Template by Low-Temperature Radio-Frequency Sputtering
Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thi...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947417/ https://www.ncbi.nlm.nih.gov/pubmed/31817335 http://dx.doi.org/10.3390/ma12244046 |
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author | Hao, Guo-Dong Taniguchi, Manabu Inoue, Shin-ichiro |
author_facet | Hao, Guo-Dong Taniguchi, Manabu Inoue, Shin-ichiro |
author_sort | Hao, Guo-Dong |
collection | PubMed |
description | Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al(0.7)Ga(0.3)N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N(2)) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N(2) ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices. |
format | Online Article Text |
id | pubmed-6947417 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-69474172020-01-13 Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al(0.7)Ga(0.3)N Template by Low-Temperature Radio-Frequency Sputtering Hao, Guo-Dong Taniguchi, Manabu Inoue, Shin-ichiro Materials (Basel) Article Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al(0.7)Ga(0.3)N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N(2)) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N(2) ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices. MDPI 2019-12-05 /pmc/articles/PMC6947417/ /pubmed/31817335 http://dx.doi.org/10.3390/ma12244046 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hao, Guo-Dong Taniguchi, Manabu Inoue, Shin-ichiro Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al(0.7)Ga(0.3)N Template by Low-Temperature Radio-Frequency Sputtering |
title | Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al(0.7)Ga(0.3)N Template by Low-Temperature Radio-Frequency Sputtering |
title_full | Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al(0.7)Ga(0.3)N Template by Low-Temperature Radio-Frequency Sputtering |
title_fullStr | Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al(0.7)Ga(0.3)N Template by Low-Temperature Radio-Frequency Sputtering |
title_full_unstemmed | Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al(0.7)Ga(0.3)N Template by Low-Temperature Radio-Frequency Sputtering |
title_short | Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al(0.7)Ga(0.3)N Template by Low-Temperature Radio-Frequency Sputtering |
title_sort | highly deep ultraviolet–transparent h-bn film deposited on an al(0.7)ga(0.3)n template by low-temperature radio-frequency sputtering |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947417/ https://www.ncbi.nlm.nih.gov/pubmed/31817335 http://dx.doi.org/10.3390/ma12244046 |
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