Cargando…
Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al(0.7)Ga(0.3)N Template by Low-Temperature Radio-Frequency Sputtering
Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thi...
Autores principales: | Hao, Guo-Dong, Taniguchi, Manabu, Inoue, Shin-ichiro |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947417/ https://www.ncbi.nlm.nih.gov/pubmed/31817335 http://dx.doi.org/10.3390/ma12244046 |
Ejemplares similares
-
Homogeneity and Thermal Stability of Sputtered Al(0.7)Sc(0.3)N Thin Films
por: Carmona-Cejas, José Manuel, et al.
Publicado: (2023) -
Superparamagnetic state in La(0.7)Sr(0.3)MnO(3) thin films obtained by rf-sputtering
por: Ramírez Camacho, M. C., et al.
Publicado: (2020) -
Infrared photodetector sensitized by InAs quantum dots embedded near an Al(0.3)Ga(0.7)As/GaAs heterointerface
por: Murata, Takahiko, et al.
Publicado: (2020) -
Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al(0.3)Ga(0.7)As Quantum Dots Grown by Droplet Epitaxy
por: Yeo, Inah, et al.
Publicado: (2020) -
Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing
por: Wang, Dengkui, et al.
Publicado: (2021)