A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain: A Hall Effect and Raman Study

Utilizing the intrinsic mobility–strain relationship in semiconductors is critical for enabling strain engineering applications in high‐performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are re...

Descripción completa

Detalles Bibliográficos
Autores principales: Choi, Hyun Ho, Yi, Hee Taek, Tsurumi, Junto, Kim, Jae Joon, Briseno, Alejandro L., Watanabe, Shun, Takeya, Jun, Cho, Kilwon, Podzorov, Vitaly
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947506/
https://www.ncbi.nlm.nih.gov/pubmed/31921560
http://dx.doi.org/10.1002/advs.201901824

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947506/
https://www.ncbi.nlm.nih.gov/pubmed/31921560
http://dx.doi.org/10.1002/advs.201901824

Ejemplares similares