Cargando…
Forward Voltage Drop Induced by an Abnormal Threading Dislocation Aggregation in 4H-SiC GTO Devices
An abnormal star-like defect was found on the failed SiC gate turn-off thyristor (GTO) devices after metal removal and KOH etching at 450 °C in this work. It is of extraordinary larger size of 210–580 µm, even much larger than the etch pit of a micropipe in 4H-SiC. In addition, the abnormal star-lik...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947509/ https://www.ncbi.nlm.nih.gov/pubmed/31817311 http://dx.doi.org/10.3390/ma12244042 |