A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resista...

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Detalles Bibliográficos
Autores principales: Sun, Zhonghao, Huang, Huolin, Sun, Nan, Tao, Pengcheng, Zhao, Cezhou, Liang, Yung C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6952818/
https://www.ncbi.nlm.nih.gov/pubmed/31817374
http://dx.doi.org/10.3390/mi10120848

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6952818/
https://www.ncbi.nlm.nih.gov/pubmed/31817374
http://dx.doi.org/10.3390/mi10120848

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