Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss

In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. By adjusting the doping concentration on both sides of the heterojunction, the turn-off loss...

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Detalles Bibliográficos
Autores principales: Mao, Hong-kai, Wang, Ying, Wu, Xue, Su, Fang-wen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6952884/
https://www.ncbi.nlm.nih.gov/pubmed/31779077
http://dx.doi.org/10.3390/mi10120815

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6952884/
https://www.ncbi.nlm.nih.gov/pubmed/31779077
http://dx.doi.org/10.3390/mi10120815

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