Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node

The radiation effects on a multi-nanosheet tunneling-based field effect transistor (NS-TFET) were investigated for a 3-nm technology node using a three-dimensional (3D) technology computer-aided design (TCAD) simulator. An alpha particle was injected into a field effect transistor (FET), which resul...

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Detalles Bibliográficos
Autores principales: Hong, Jungmin, Park, Jaewoong, Lee, Jeawon, Ham, Jeonghun, Park, Kiron, Jeon, Jongwook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6953112/
https://www.ncbi.nlm.nih.gov/pubmed/31817178
http://dx.doi.org/10.3390/mi10120847

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6953112/
https://www.ncbi.nlm.nih.gov/pubmed/31817178
http://dx.doi.org/10.3390/mi10120847

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