Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate

This study aimed to investigate temperature dependencies at different injection currents (ICs) of the electroluminescence (EL) spectra from a green InGaN/GaN light-emitting diode (LED) based on multiple quantum wells (MQWs) grown on a Si substrate in a wide range of ICs (0.001–350 mA) and temperatur...

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Detalles Bibliográficos
Autores principales: Li, Changfu, Li, Jianfei, Xu, Mingsheng, Ji, Ziwu, Shi, Kaiju, Li, Hongbin, Wei, Yehui, Xu, Xiangang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6954249/
https://www.ncbi.nlm.nih.gov/pubmed/31924822
http://dx.doi.org/10.1038/s41598-019-57008-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6954249/
https://www.ncbi.nlm.nih.gov/pubmed/31924822
http://dx.doi.org/10.1038/s41598-019-57008-3

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