Cargando…

Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate

This study aimed to investigate temperature dependencies at different injection currents (ICs) of the electroluminescence (EL) spectra from a green InGaN/GaN light-emitting diode (LED) based on multiple quantum wells (MQWs) grown on a Si substrate in a wide range of ICs (0.001–350 mA) and temperatur...

Descripción completa

Detalles Bibliográficos
Autores principales:	Li, Changfu, Li, Jianfei, Xu, Mingsheng, Ji, Ziwu, Shi, Kaiju, Li, Hongbin, Wei, Yehui, Xu, Xiangang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6954249/ https://www.ncbi.nlm.nih.gov/pubmed/31924822 http://dx.doi.org/10.1038/s41598-019-57008-3

Ejemplares similares

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
por: Li, Changfu, et al.
Publicado: (2017)

Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale
por: Wolter, Stefan, et al.
Publicado: (2021)

Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon
por: Zhao, X., et al.
Publicado: (2020)

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer
por: Hu, Hongpo, et al.
Publicado: (2019)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy
por: Gu, Ying, et al.
Publicado: (2023)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
por: Lin, Tao, et al.
Publicado: (2018)

Study on the effect of size on InGaN red micro-LEDs
por: Horng, Ray-Hua, et al.
Publicado: (2022)

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
por: Sarzyński, Marcin, et al.
Publicado: (2019)

Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs
por: Meier, Johanna, et al.
Publicado: (2022)

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
por: Ma, Dingyu, et al.
Publicado: (2017)

Structural and optical analyses for InGaN-based red micro-LED
por: Hsiao, Fu-He, et al.
Publicado: (2023)

Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD
por: Sun, Xiaojuan, et al.
Publicado: (2012)

Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution
por: Yang, Haifeng, et al.
Publicado: (2023)

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration
por: Qi, Longheng, et al.
Publicado: (2023)

Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN
por: Gong, Y., et al.
Publicado: (2019)

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs
por: You, Yao-Hong, et al.
Publicado: (2014)

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
por: Hajdel, Mateusz, et al.
Publicado: (2021)

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
por: Barettin, Daniele, et al.
Publicado: (2023)

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits
por: Liu, Mengling, et al.
Publicado: (2018)

Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
por: Wang, Sheng-Wen, et al.
Publicado: (2017)

Nanoscale Characterization of V-Defect in InGaN/GaN QWs LEDs Using Near-Field Scanning Optical Microscopy
por: Li, Yufeng, et al.
Publicado: (2019)

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density
por: Lu, Shiqiang, et al.
Publicado: (2021)

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si
por: He, Junlei, et al.
Publicado: (2018)

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD
por: Zhang, Lian, et al.
Publicado: (2021)

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
por: Kundys, Dmytro, et al.
Publicado: (2016)

Modified Distributed Bragg Reflectors for Color Stability in InGaN Red Micro-LEDs
por: Miao, Wen-Chien, et al.
Publicado: (2023)

High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission
por: Haggar, Jack IH., et al.
Publicado: (2020)

InGaN as a Substrate for AC Photoelectrochemical Imaging
por: Zhou, Bo, et al.
Publicado: (2019)

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
por: Wang, Tao, et al.
Publicado: (2018)

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
por: Li, Hongjian, et al.
Publicado: (2016)

Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure
por: Zhao, Xiaoyu, et al.
Publicado: (2021)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si
por: Sun, Yi, et al.
Publicado: (2018)

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N(2)/H(2)-Grown GaN Barrier
por: Zhou, Xiaorun, et al.
Publicado: (2017)

Characterization of semi-polar (20[Formula: see text] 1) InGaN microLEDs
por: Horng, Ray-Hua, et al.
Publicado: (2020)

Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
por: Bi, Zhaoxia, et al.
Publicado: (2020)

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer
por: Zhou, Quanbin, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_44kj77tn6ujblpn5cnb0do2o1d