Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-V(N)) is energy favorab...

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Detalles Bibliográficos
Autores principales: Liu, Xuefei, Zhang, Zhaofu, Luo, Zijiang, Lv, Bing, Ding, Zhao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6956148/
https://www.ncbi.nlm.nih.gov/pubmed/31771190
http://dx.doi.org/10.3390/nano9121674

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6956148/
https://www.ncbi.nlm.nih.gov/pubmed/31771190
http://dx.doi.org/10.3390/nano9121674

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