Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions

A Pd-functionalized hydrogen gas sensor was fabricated on an AlGaN/GaN-on-Si heterostructure platform. The AlGaN layer under the Pd catalyst area was partially recessed by plasma etching, which resulted in a low standby current level enhancing the sensor response. Sensor stability and power consumpt...

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Detalles Bibliográficos
Autores principales: Choi, June-Heang, Kim, Hyungtak, Sung, Hyuk-Kee, Cha, Ho-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6960531/
https://www.ncbi.nlm.nih.gov/pubmed/31888143
http://dx.doi.org/10.3390/s19245549

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6960531/
https://www.ncbi.nlm.nih.gov/pubmed/31888143
http://dx.doi.org/10.3390/s19245549

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