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Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions
A Pd-functionalized hydrogen gas sensor was fabricated on an AlGaN/GaN-on-Si heterostructure platform. The AlGaN layer under the Pd catalyst area was partially recessed by plasma etching, which resulted in a low standby current level enhancing the sensor response. Sensor stability and power consumpt...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6960531/ https://www.ncbi.nlm.nih.gov/pubmed/31888143 http://dx.doi.org/10.3390/s19245549 |