Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation

Extreme ultraviolet lithography (EUVL) is a leading-edge technology for pattern miniaturization and the production of advanced electronic devices. One of the current critical challenges for further scaling down the technology is reducing the line-edge roughness (LER) of the final patterns while simu...

Descripción completa

Detalles Bibliográficos
Autores principales: Park, Juhae, Lee, Sung-Gyu, Vesters, Yannick, Severi, Joren, Kim, Myungwoong, De Simone, Danilo, Oh, Hye-Keun, Hur, Su-Mi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6960668/
https://www.ncbi.nlm.nih.gov/pubmed/31766636
http://dx.doi.org/10.3390/polym11121923

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6960668/
https://www.ncbi.nlm.nih.gov/pubmed/31766636
http://dx.doi.org/10.3390/polym11121923

Ejemplares similares