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Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation

Extreme ultraviolet lithography (EUVL) is a leading-edge technology for pattern miniaturization and the production of advanced electronic devices. One of the current critical challenges for further scaling down the technology is reducing the line-edge roughness (LER) of the final patterns while simu...

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Detalles Bibliográficos
Autores principales:	Park, Juhae, Lee, Sung-Gyu, Vesters, Yannick, Severi, Joren, Kim, Myungwoong, De Simone, Danilo, Oh, Hye-Keun, Hur, Su-Mi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6960668/ https://www.ncbi.nlm.nih.gov/pubmed/31766636 http://dx.doi.org/10.3390/polym11121923

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