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Dual-Level Capacitive Micromachined Uncooled Thermal Detector

This paper presents a novel dual-level capacitive microcantilever-based thermal detector that is implemented in the commercial surface micromachined PolyMUMPs technology. The proposed design is implemented side-by-side with four different single-level designs to enable a design-to-design performance...

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Detalles Bibliográficos
Autores principales: Tawfik, Hani H., Allidina, Karim, Nabki, Frederic, El-Gamal, Mourad N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6961019/
https://www.ncbi.nlm.nih.gov/pubmed/31835469
http://dx.doi.org/10.3390/s19245434
Descripción
Sumario:This paper presents a novel dual-level capacitive microcantilever-based thermal detector that is implemented in the commercial surface micromachined PolyMUMPs technology. The proposed design is implemented side-by-side with four different single-level designs to enable a design-to-design performance comparison. The dual-level design exhibits a rate of capacitance change per degree Celsius that is over three times higher than that of the single-level designs and has a base capacitance that is more than twice as large. These improvements are achieved because the dual-level architecture allows a 100% electrode-to-detector area, while single-level designs are shown to suffer from an inherent trade-off between sensitivity and base capacitance. In single-level designs, either the number of the bimorph beams or the capacitance electrode can be increased for a given sensor area. The former is needed for a longer effective length of the bimorph for higher thermomechanical sensitivity (i.e., larger tilting angels per degree Celsius), while the latter is desired to relax the read-out integrated-circuits requirements. This thermomechanical response-to-initial capacitance trade-off is mitigated by the dual-level design, which dedicates one structural layer to serve as the upper electrode of the detector, while the other layer contains as many bimorph beams as desired, independently of the former’s area.