Cargando…
A systematic method for simulating total ionizing dose effects using the finite elements method
Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated....
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6961527/ https://www.ncbi.nlm.nih.gov/pubmed/32009865 http://dx.doi.org/10.1007/s10825-017-1027-2 |