Effect of Joule Heating on Resistive Switching Characteristic in AlO(x) Cells Made by Thermal Oxidation Formation

The AlO(x)-based resistive switching memory device is fabricated by an oxidation diffusion process that involves depositing an Al film on an ITO substrate and annealing at 400 °C in a vacuum. An AlO(x) interface layer with a thickness of ~ 20 nm is formed as a resistance switching layer. Bipolar and...

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Detalles Bibliográficos
Autores principales: Zhang, Xinxin, Xu, Ling, Zhang, Hui, Liu, Jian, Tan, Dingwen, Chen, Liangliang, Ma, Zhongyuan, Li, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6962414/
https://www.ncbi.nlm.nih.gov/pubmed/31940099
http://dx.doi.org/10.1186/s11671-019-3229-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6962414/
https://www.ncbi.nlm.nih.gov/pubmed/31940099
http://dx.doi.org/10.1186/s11671-019-3229-y

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