Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease o...

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Detalles Bibliográficos
Autores principales: Sánta, Botond, Molnár, Dániel, Haiber, Patrick, Gubicza, Agnes, Szilágyi, Edit, Zolnai, Zsolt, Halbritter, András, Csontos, Miklós
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2020
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6964644/
https://www.ncbi.nlm.nih.gov/pubmed/31976200
http://dx.doi.org/10.3762/bjnano.11.9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6964644/
https://www.ncbi.nlm.nih.gov/pubmed/31976200
http://dx.doi.org/10.3762/bjnano.11.9

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