Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today’s production of blue and white light emitting diodes (LEDs). Both surface area and number of surface angles are increased, facilitating light outcoupling from the LED chip. The structure of a GaN layer stack grown...

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Detalles Bibliográficos
Autores principales: Tautz, Markus, Kuchenbrod, Maren T, Hertkorn, Joachim, Weinberger, Robert, Welzel, Martin, Pfitzner, Arno, Díaz Díaz, David
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2020
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6964651/
https://www.ncbi.nlm.nih.gov/pubmed/31976195
http://dx.doi.org/10.3762/bjnano.11.4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6964651/
https://www.ncbi.nlm.nih.gov/pubmed/31976195
http://dx.doi.org/10.3762/bjnano.11.4

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