Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the...

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Detalles Bibliográficos
Autores principales: Hettick, Mark, Li, Hao, Lien, Der-Hsien, Yeh, Matthew, Yang, Tzu-Yi, Amani, Matin, Gupta, Niharika, Chrzan, Daryl C., Chueh, Yu-Lun, Javey, Ali
Formato: Online Artículo Texto
Lenguaje:English
Publicado: National Academy of Sciences 2020
Materias:
Physical Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6969534/
https://www.ncbi.nlm.nih.gov/pubmed/31892540
http://dx.doi.org/10.1073/pnas.1915786117

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6969534/
https://www.ncbi.nlm.nih.gov/pubmed/31892540
http://dx.doi.org/10.1073/pnas.1915786117

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