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Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C
III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
National Academy of Sciences
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6969534/ https://www.ncbi.nlm.nih.gov/pubmed/31892540 http://dx.doi.org/10.1073/pnas.1915786117 |