Significant enhancement of the bias stability of Zn-O-N thin-film transistors via Si doping

Si doping was used to significantly improve the bias stability of ZnON thin-film transistors. Si 3 W (~1%) doped ZnON TFTs showed a saturation mobility of 19.70 cm(2)/Vs along with remarkable improvements in the threshold voltage shift for negative gate bias stress (NBS) within 1.69 V. The effects o...

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Detalles Bibliográficos
Autores principales: Song, Aeran, Park, Hyun-Woo, Kim, Hyoung-Do, Kim, Hyun-Suk, Chung, Kwun-Bum
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6970993/
https://www.ncbi.nlm.nih.gov/pubmed/31959828
http://dx.doi.org/10.1038/s41598-020-57642-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6970993/
https://www.ncbi.nlm.nih.gov/pubmed/31959828
http://dx.doi.org/10.1038/s41598-020-57642-2

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