Cargando…

Significant enhancement of the bias stability of Zn-O-N thin-film transistors via Si doping

Si doping was used to significantly improve the bias stability of ZnON thin-film transistors. Si 3 W (~1%) doped ZnON TFTs showed a saturation mobility of 19.70 cm(2)/Vs along with remarkable improvements in the threshold voltage shift for negative gate bias stress (NBS) within 1.69 V. The effects o...

Descripción completa

Detalles Bibliográficos
Autores principales:	Song, Aeran, Park, Hyun-Woo, Kim, Hyoung-Do, Kim, Hyun-Suk, Chung, Kwun-Bum
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6970993/ https://www.ncbi.nlm.nih.gov/pubmed/31959828 http://dx.doi.org/10.1038/s41598-020-57642-2

Ejemplares similares

Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor
por: Park, Hyun-Woo, et al.
Publicado: (2017)

Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors
por: Hwang, Yu-Jin, et al.
Publicado: (2022)

Enhancement of electrical characteristics and stability of self-patterned In–Zn–O thin-film transistors based on photosensitive precursors
por: Kim, Hee Jun, et al.
Publicado: (2020)

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
por: Kim, Won-Gi, et al.
Publicado: (2016)

Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors
por: Saha, Jewel Kumer, et al.
Publicado: (2020)

Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors
por: Kang, Soo Cheol, et al.
Publicado: (2020)

Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array
por: Kim, Hyun Jae, et al.
Publicado: (2020)

Replacement of n-type layers with a non-toxic APTES interfacial layer to improve the performance of amorphous Si thin-film solar cells
por: Hafeez, Hassan, et al.
Publicado: (2019)

Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
por: Zhou, Yan, et al.
Publicado: (2018)

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers
por: Zhang, Ying, et al.
Publicado: (2019)

High-mobility ambipolar ZnO-graphene hybrid thin film transistors
por: Song, Wooseok, et al.
Publicado: (2014)

Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors
por: Nguyen, Ky V., et al.
Publicado: (2016)

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
por: Zhang, Xue, et al.
Publicado: (2017)

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors
por: Wang, Yunping, et al.
Publicado: (2022)

Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor
por: Chien, Feng-Tso, et al.
Publicado: (2021)

Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor
por: Yao, Rihui, et al.
Publicado: (2021)

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition
por: Yoon, So-Jung, et al.
Publicado: (2018)

Thin-Film Transistors
por: Chien, Feng-Tso, et al.
Publicado: (2022)

ZnO thin-film transistors for cost-efficient flexible electronics
por: Vidor, Fábio Fedrizzi, et al.
Publicado: (2017)

Subthreshold Conduction of Disordered ZnO-Based Thin-Film Transistors
por: Yoon, Minho
Publicado: (2023)

Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
por: Lee, Seung-Hun, et al.
Publicado: (2019)

Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate
por: He, Ziyan, et al.
Publicado: (2022)

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors
por: Oh, Young Jun, et al.
Publicado: (2015)

Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors via in situ interfacial hydrogen doping modulation
por: Wang, Xiao-Lin, et al.
Publicado: (2020)

Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors
por: Lee, Sungsik, et al.
Publicado: (2015)

Effects of Iodine Doping on Electrical Characteristics of Solution-Processed Copper Oxide Thin-Film Transistors
por: Lee, Hyeonju, et al.
Publicado: (2021)

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors
por: Lee, Ching-Ting, et al.
Publicado: (2018)

Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
por: Park, Byoungjun, et al.
Publicado: (2010)

Fabrication of high performance thin-film transistors via pressure-induced nucleation
por: Kang, Myung-Koo, et al.
Publicado: (2014)

Oxide thin film transistors
por: Jayaraj, MK, et al.
Publicado: (2017)

Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering
por: Hwang, Dong Hyun, et al.
Publicado: (2012)

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
por: Kim, Hyun-Suk, et al.
Publicado: (2013)

Transparent ZnO Thin-Film Deposition by Spray Pyrolysis for High-Performance Metal-Oxide Field-Effect Transistors
por: Cho, Junhee, et al.
Publicado: (2019)

Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors
por: Wang, Dapeng, et al.
Publicado: (2020)

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors
por: Lee, Sungsik, et al.
Publicado: (2016)

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiO(x) Passivation Layer
por: Liu, Xianzhe, et al.
Publicado: (2018)

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature
por: Seo, Jin-Suk, et al.
Publicado: (2013)

Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes
por: Sberna, Paolo M., et al.
Publicado: (2017)

Thin film transistors: materials and processes
por: Kuo, Yue
Publicado: (2004)

Stable organic thin-film transistors
por: Jia, Xiaojia, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_jgp6u4uicotlgliv423ju5qq9b