The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene

GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished A...

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Detalles Bibliográficos
Autores principales: Liudi Mulyo, Andreas, Rajpalke, Mohana K., Vullum, Per Erik, Weman, Helge, Kishino, Katsumi, Fimland, Bjørn-Ove
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6972738/
https://www.ncbi.nlm.nih.gov/pubmed/31964934
http://dx.doi.org/10.1038/s41598-019-55424-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6972738/
https://www.ncbi.nlm.nih.gov/pubmed/31964934
http://dx.doi.org/10.1038/s41598-019-55424-z

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