Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods

GeSn is a promising material for the fabrication of on-chip photonic and nanoelectronic devices. Processing techniques dedicated to GeSn have thus been developed, including epitaxy, annealing, ion implantation, and etching. In this work, suspended, strain-relaxed, and high-quality GeSn microdisks ar...

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Detalles Bibliográficos
Autores principales: Zhu, Guangjian, Liu, Tao, Zhong, Zhenyang, Yang, Xinju, Wang, Liming, Jiang, Zuimin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6973833/
https://www.ncbi.nlm.nih.gov/pubmed/31965340
http://dx.doi.org/10.1186/s11671-020-3251-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6973833/
https://www.ncbi.nlm.nih.gov/pubmed/31965340
http://dx.doi.org/10.1186/s11671-020-3251-0

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