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Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor

Solution-processed metal oxides require a great deal of thermal budget in order to achieve the desired film properties. Here, we show that the deposition temperature of sprayed zirconium oxide (ZrO(x)) thin film can be lowered by exposing the film surface to an ultraviolet (UV) ozone treatment at ro...

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Autores principales: Oluwabi, Abayomi Titilope, Gaspar, Diana, Katerski, Atanas, Mere, Arvo, Krunks, Malle, Pereira, Luis, Oja Acik, Ilona
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6981653/
https://www.ncbi.nlm.nih.gov/pubmed/31861357
http://dx.doi.org/10.3390/ma13010006
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author Oluwabi, Abayomi Titilope
Gaspar, Diana
Katerski, Atanas
Mere, Arvo
Krunks, Malle
Pereira, Luis
Oja Acik, Ilona
author_facet Oluwabi, Abayomi Titilope
Gaspar, Diana
Katerski, Atanas
Mere, Arvo
Krunks, Malle
Pereira, Luis
Oja Acik, Ilona
author_sort Oluwabi, Abayomi Titilope
collection PubMed
description Solution-processed metal oxides require a great deal of thermal budget in order to achieve the desired film properties. Here, we show that the deposition temperature of sprayed zirconium oxide (ZrO(x)) thin film can be lowered by exposing the film surface to an ultraviolet (UV) ozone treatment at room temperature. Atomic force microscopy reveals a smooth and uniform film with the root mean square roughness reduced from ~ 0.63 nm (UVO-O) to ~ 0.28 nm (UVO-120) in the UV–ozone treated ZrO(x) films. X-ray photoelectron spectroscopy analysis indicates the formation of a Zr–O network on the surface film, and oxygen vacancy is reduced in the ZrO(x) lattice by increasing the UV–ozone treatment time. The leakage current density in Al/ZrOx/p-Si structure was reduced by three orders of magnitude by increasing the UV-ozone exposure time, while the capacitance was in the range 290–266 nF/cm(2), corresponding to a relative permittivity (k) in the range 5.8–6.6 at 1 kHz. An indium gallium zinc oxide (IGZO)-based thin film transistor, employing a UV-treated ZrO(x) gate dielectric deposited at 200 °C, exhibits negligible hysteresis, an I(on)/I(off) ratio of 10(4), a saturation mobility of 8.4 cm(2) V(−1)S(−1), a subthreshold slope of 0.21 V.dec(−1), and a V(on) of 0.02 V. These results demonstrate the potentiality of low-temperature sprayed amorphous ZrO(x) to be applied as a dielectric in flexible and low-power-consumption oxide electronics.
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spelling pubmed-69816532020-02-03 Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor Oluwabi, Abayomi Titilope Gaspar, Diana Katerski, Atanas Mere, Arvo Krunks, Malle Pereira, Luis Oja Acik, Ilona Materials (Basel) Article Solution-processed metal oxides require a great deal of thermal budget in order to achieve the desired film properties. Here, we show that the deposition temperature of sprayed zirconium oxide (ZrO(x)) thin film can be lowered by exposing the film surface to an ultraviolet (UV) ozone treatment at room temperature. Atomic force microscopy reveals a smooth and uniform film with the root mean square roughness reduced from ~ 0.63 nm (UVO-O) to ~ 0.28 nm (UVO-120) in the UV–ozone treated ZrO(x) films. X-ray photoelectron spectroscopy analysis indicates the formation of a Zr–O network on the surface film, and oxygen vacancy is reduced in the ZrO(x) lattice by increasing the UV–ozone treatment time. The leakage current density in Al/ZrOx/p-Si structure was reduced by three orders of magnitude by increasing the UV-ozone exposure time, while the capacitance was in the range 290–266 nF/cm(2), corresponding to a relative permittivity (k) in the range 5.8–6.6 at 1 kHz. An indium gallium zinc oxide (IGZO)-based thin film transistor, employing a UV-treated ZrO(x) gate dielectric deposited at 200 °C, exhibits negligible hysteresis, an I(on)/I(off) ratio of 10(4), a saturation mobility of 8.4 cm(2) V(−1)S(−1), a subthreshold slope of 0.21 V.dec(−1), and a V(on) of 0.02 V. These results demonstrate the potentiality of low-temperature sprayed amorphous ZrO(x) to be applied as a dielectric in flexible and low-power-consumption oxide electronics. MDPI 2019-12-18 /pmc/articles/PMC6981653/ /pubmed/31861357 http://dx.doi.org/10.3390/ma13010006 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Oluwabi, Abayomi Titilope
Gaspar, Diana
Katerski, Atanas
Mere, Arvo
Krunks, Malle
Pereira, Luis
Oja Acik, Ilona
Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor
title Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor
title_full Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor
title_fullStr Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor
title_full_unstemmed Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor
title_short Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor
title_sort influence of post-uv/ozone treatment of ultrasonic-sprayed zirconium oxide dielectric films for a low-temperature oxide thin film transistor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6981653/
https://www.ncbi.nlm.nih.gov/pubmed/31861357
http://dx.doi.org/10.3390/ma13010006
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