Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN

The compliant behavior of densely packed 10 × 10 µm(2) square patterned InGaN layers on top of porous GaN is demonstrated. The elastic relaxation of the InGaN layers is enabled by the low stiffness of the porous GaN under layer. High resolution X-ray diffraction measurements show that upon InGaN re-...

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Detalles Bibliográficos
Autores principales: Pasayat, Shubhra S., Gupta, Chirag, Wang, Yifan, DenBaars, Steven P., Nakamura, Shuji, Keller, Stacia, Mishra, Umesh K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6981930/
https://www.ncbi.nlm.nih.gov/pubmed/31947918
http://dx.doi.org/10.3390/ma13010213

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6981930/
https://www.ncbi.nlm.nih.gov/pubmed/31947918
http://dx.doi.org/10.3390/ma13010213

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