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Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN
The compliant behavior of densely packed 10 × 10 µm(2) square patterned InGaN layers on top of porous GaN is demonstrated. The elastic relaxation of the InGaN layers is enabled by the low stiffness of the porous GaN under layer. High resolution X-ray diffraction measurements show that upon InGaN re-...
Autores principales: | Pasayat, Shubhra S., Gupta, Chirag, Wang, Yifan, DenBaars, Steven P., Nakamura, Shuji, Keller, Stacia, Mishra, Umesh K. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6981930/ https://www.ncbi.nlm.nih.gov/pubmed/31947918 http://dx.doi.org/10.3390/ma13010213 |
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