Structure Quality of LuFeO(3) Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

Structural quality of LuFeO [Formula: see text] epitaxial layers grown by pulsed-laser deposition on sapphire substrates with and without platinum Pt interlayers has been investigated by in situ high-resolution X-ray diffraction (reciprocal-space mapping). The parameters of the structure such as size and misorientation of mosaic blocks have been determined as functions of the thickness of LuFeO [Formula: see text] during growth and for different thicknesses of platinum interlayers up to 40 nm. By means of fitting of the time-resolved X-ray reflectivity curves and by in situ X-ray diffraction measurement, we demonstrate that the LuFeO [Formula: see text] growth rate as well as the out-of-plane lattice parameter are almost independent from Pt interlayer thickness, while the in-plane LuFeO [Formula: see text] lattice parameter decreases. We reveal that, despite the different morphologies of the Pt interlayers with different thickness, LuFeO [Formula: see text] was growing as a continuous mosaic layer and the misorientation of the mosaic blocks decreases with increasing Pt thickness. The X-ray diffraction results combined with ex situ scanning electron microscopy and high-resolution transmission electron microscopy demonstrate that the Pt interlayer significantly improves the structure of LuFeO [Formula: see text] by reducing the misfit of the LuFeO [Formula: see text] lattice with respect to the material underneath.