A High-Temperature, Low-Noise Readout ASIC for MEMS-Based Accelerometers

This paper presents the development and measurement results of a complementary metal oxide semiconductor (CMOS) readout application-specific integrated circuit (ASIC) for bulk-silicon microelectromechanical system (MEMS) accelerometers. The proposed ASIC converts the capacitance difference of the ME...

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Detalles Bibliográficos
Autores principales: Qi, Min, Guo, An-qiang, Qiao, Dong-hai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982914/
https://www.ncbi.nlm.nih.gov/pubmed/31906194
http://dx.doi.org/10.3390/s20010241

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982914/
https://www.ncbi.nlm.nih.gov/pubmed/31906194
http://dx.doi.org/10.3390/s20010241

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