Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process

A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extractions of interface states and charges within the...

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Detalles Bibliográficos
Autores principales: Doyen, Célestin, Ricq, Stéphane, Magnan, Pierre, Marcelot, Olivier, Barlas, Marios, Place, Sébastien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982946/
https://www.ncbi.nlm.nih.gov/pubmed/31947913
http://dx.doi.org/10.3390/s20010287

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6982946/
https://www.ncbi.nlm.nih.gov/pubmed/31947913
http://dx.doi.org/10.3390/s20010287

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